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| Ordering number : ENN8194 MCH5810 MCH5810 Features * * MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications * Composite type with a P-Channel Sillicon MOSFET (MCH3335) and a Schottky Barrier Diode (SBS011) contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * 4V drive. [SBD] * Short reverse recovery time. * Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage(*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 150 3 --55 to +125 --55 to +125 V V mA A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit --30 --9 --0.4 --1.6 0.6 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : QK (*1) : When designing a circuit using this product, that this P-channel MOSFET has a gate (oxide film) protection diode connected only between its gate and source. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12505PE TS IM TB-00001111 No.8194-1/6 MCH5810 Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=100mA IF=150mA VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 15 0.32 0.35 10 10 0.36 0.41 45 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=--8V, VDS=0 VDS=--10V, ID=-100A VDS=--10V, ID=-0.2A ID=--0.2A, VGS=-4.5V ID=--0.1A, VGS=-2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4.5V, ID=--0.4A VDS=--10V, VGS=-4.5V, ID=--0.4A VDS=--10V, VGS=-4.5V, ID=--0.4A IS=--0.4A, VGS=0 --0.4 0.2 0.42 1.4 2.0 40 8 4.5 10 5 10 5 0.83 0.25 0.17 --1.0 --1.5 1.8 2.8 --30 --1 --1 --1.4 V A A V S pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2195 0.25 Electrical Connection 5 0.3 4 5 0.15 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 1 2 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 3 2 1 Top view 5 4 0.85 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 1 2 3 (Top view) No.8194-2/6 MCH5810 Switching Time Test Circuit [MOSFET] trr Test Circuit [SBD] VIN 0V --4.5V VIN VDD= --15V Duty10% 100mA ID= --0.2A RL=75 PW=10s D.C.1% 10s G --5V trr MCH5810 P.G 50 S --0.30 ID -- VDS V [MOSFET] --2.0 --0.50 --0.45 --0.40 ID -- VGS Ta= --25 C 75 C 25 C 100mA D VOUT 50 100 10 [MOSFET] VDS= --10V V --3 .0 V --0.25 Drain Current, ID -- A 0V --3. 5 --2 V .5 Drain Current, ID -- A --6. --4.5V 0V --4. --0.20 --0.35 --0.30 --0.25 --0.20 --0.15 VGS= --1.5V --0.10 25 --0.05 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --25 --1.5 C --0.05 C --0.10 Ta= 7 5C --0.15 --2.0 --2.5 --3.0 10mA --3.5 80 100 120 140 IT07656 5.0 4.5 Drain-to-Source Voltage, VDS -- V IT07653 RDS(on) -- VGS [MOSFET] Ta=25C 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --60 Gate-to-Source Voltage, VGS -- V IT07654 RDS(on) -- Ta [MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- 4.0 ID= --0.2A 3.5 3.0 Static Drain-to-Source On-State Resistance, RDS(on) -- --0.1A 2.5 2.0 1.5 1.0 0.5 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 V --2.5 S= A, VG --0.1 I D= --4.5V S= 2A, VG 0. I D= -- --40 --20 0 20 40 60 Gate-to-Source Voltage, VGS -- V IT08162 Ambient Temperature, Ta -- C No.8194-3/6 MCH5810 1.0 yfs -- ID [MOSFET] VDS= --10V --1.0 7 5 3 2 --0.1 7 5 3 2 IF -- VSD [MOSFET] VGS=0 Forward Transfer Admittance, yfs -- S 7 5 3 2 0.1 7 5 3 2 C -25 =C Ta 75 3 2 0.01 --0.001 --0.001 2 3 5 7 --0.01 2 3 5 7 --0.1 2 3 Drain Current, ID -- A 3 5 7 --1.0 IT07657 60 0 --0.2 --0.4 --0.6 Ta=75 --0.01 7 5 C 25C --25C --0.8 --1.0 C 25 Forward Current, IF -- A --1.2 --1.4 SW Time -- ID [MOSFET] VDS= --15V VGS= --4.5V IT08697 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] Switching Time, SW Time -- ns 2 50 Ciss, Coss, Crss -- pF td(off) 10 40 Ciss td(on) tf 30 7 5 tr 20 3 2 --0.1 10 Coss Crss 0 --5 --10 --15 --20 --25 --30 0 2 3 5 7 IT08698 Drain Current, ID -- A --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VGS -- Qg [MOSFET] 5 Drain-to-Source Voltage, VDS -- V IT08163 RDS(on) -- ID [MOSFET] VGS= --4.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --400mA 3 2 Ta=75C 25C --25C 1.0 7 0.8 0.9 5 --0.01 2 3 5 7 --0.1 2 3 5 Total Gate Charge, Qg -- nC 5 IT08944 RDS(on) -- ID Drain Current, ID -- A 7 --1.0 IT08700 [MOSFET] VGS= --2.5V 3 2 --1.0 ASO [MOSFET] <10s 10 0 1m s s 10 m IDP= --1.6A Static Drain-to-Source On-State Resistance, RDS(on) -- Drain Current, ID -- A 3 7 5 3 2 --0.1 7 5 3 2 ID= --0.4A Ta=75C 2 DC op 10 s --25C er 0m ati s 25C on (T a= Operation in this area is limited by RDS(on). 25 C ) 1.0 7 --0.01 2 3 5 7 --0.1 2 3 5 Drain Current, ID -- A --1.0 IT08165 7 --0.01 --0.1 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Drain-to-Source Voltage, VDS -- V IT08701 No.8194-4/6 MCH5810 0.8 PD -- Ta [MOSFET] Allowable Power Dissipation, PD -- W 0.6 M ou nte do na ce 0.4 ram ic bo ard (9 00 0.2 mm 2 !0 .8m m) 1u nit 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 5 3 2 IT08702 IF -- VF [SBD] 10000 7 5 3 2 IR -- VR Ta=125C [SBD] Forward Current, IF -- mA Reverse Current, IR -- A 100 7 5 Ta =1 2 5 10 C 0 C 75 C 50 25 C C 3 2 10 7 5 3 2 1.0 7 5 3 0 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0 2 4 6 100C 75C 50C 25C 0.1 0.2 0.3 0.4 0.5 IT08703 8 10 12 14 16 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 0.6 PF(AV) -- IO (1) Reverse Voltage, VR -- V 7 5 IT08704 [SBD] C -- VR [SBD] 0.5 Interterminal Capacitance, C -- pF (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 (2) (4) (3) 0.4 3 0.3 2 Rectangular wave 0.2 Sine wave 0.1 180 360 0.1 0.2 0.3 0.4 0.5 360 10 7 5 0.1 0 0 0.6 0.7 IT08705 2 3 5 7 1.0 2 3 5 7 10 2 3 Average Forward Current, IO -- A Reverse Voltage, VR -- V IT08706 No.8194-5/6 MCH5810 Note on usage : Since the MCH5810 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS No.8194-6/6 |
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